1. A single solar cell of area 1 cm2 has a photocurrent of 15 mA and a diode saturation current of three.66 x 10-11 A at 300 Ok. Calculate the open circuit voltage and the quick circuit current of the solar cell.
2. Contemplate a silicon p-i-n photodiode with an intrinsic area of width 10 ΞΌm. Mild from a GaAs laser at power Δ§Ο = 1.43 eV impinges on the diode. The optical energy is 1 W/cm2 . Calculate the photocurrent density within the detector.
three. At a wavelength of Ξ» = zero.70 ΞΌm, the index of refraction for GaAs is n2 = three.eight and that for GaP is n2 = three.2. Contemplate a GaAs 1-x Px materials with a mole fraction x = zero.40. Assuming the index of refraction is a linear perform of the mole fraction, decide the reflection coefficient, R at the GaAs0.6P0.four β air interface.
Get a custom-written paper by an expert in this subject. Plagiarism-free, on time, any citation style.
- ✓ PhD & Masters qualified writers
- ✓ Turnitin-safe β 0% similarity
- ✓ Free revisions + money-back guarantee
From $11/page · All academic levels
four. Contemplate a GaAs Fabry-Perot laser cavity. The absorption loss within the cavity is given by an absorption coefficient of 20 cm-1. Calculate the cavity size at which the absorption loss and the mirror loss turns into equal.
5. Contemplate the next supplies, GaAs, AlAs, GaP, AlAs and InAs, Which materials and mixture of supplies and alloys could also be used for make photodetectors optimized within the following two wavelengths; zero,5 to zero.eight ΞΌm, and 1.four ΞΌm?
Our expert writers specialise in this subject and deliver original, well-researched papers.
Nursing & Healthcare Β· PhD Edinburgh
Business & Law Β· MBA London
6. What materials must be used for environment friendly detector or solar cell at eight ΞΌm?
——-
1. At 300 Ok, a single 1 cm2 solar cell has a photocurrent of 15 mA and a diode saturation current of three.66 x 10-11 A. Decide the solar cell’s open circuit voltage and quick circuit current.
Join 12,400+ students who trust us with their academic success. Every order includes: free revisions within 30 days, plagiarism report, on-time delivery guarantee, and full confidentiality.
2. Contemplate a silicon p-i-n photodiode with a 10 m intrinsic area. Mild impinges on the diode from a GaAs laser with power = 1.43 eV. The optical energy is one watt per sq. centimeter. Calculate the detector’s photocurrent density.
three. At a wavelength of = zero.70 m, GaAs has an index of refraction of n2 = three.eight and GaP has an index of refraction of n2 = three.2. Contemplate the fabric GaAs 1-x Px with a mole fraction x = zero.40. Assume the index of refraction is a linear perform.
